STGWT80H65DFB
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| Manufacturer | STMicroelectronics |
| Package | TO-3P-3, SC-65-3 |
| Datasheet | STGW80H65DFB, STGWT80H65DFB |
| Description | IGBT Trench Field Stop 650V 120A 469W Through Hole TO-3P |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet STMicroelectronics STGWT80H65DFB
- Package TO-3P-3
- Manufacturer STMicroelectronics
- Series -
- Packaging Tube
- Part Status Active
- IGBT Type Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max) 650V
- Current - Collector (Ic) (Max) 120A
- Current - Collector Pulsed (Icm) 240A
- Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
- Power - Max 469W
- Switching Energy 2.1mJ (on), 1.5mJ (off)
- Input Type Standard
- Gate Charge 414nC
- Td (on/off) @ 25°C 84ns/280ns
- Test Condition 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr) 85ns
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-3P-3, SC-65-3
- Supplier Device Package TO-3P
- Base Part Number STGWT80
- detail IGBT Trench Field Stop 650V 120A 469W Through Hole TO-3P
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