STFI26NM60N

STFI26NM60N

STFI26NM60N

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مشخصات فنی:
Manufacturer STMicroelectronics
Package TO-262-3 Full Pack, I²Pak
Datasheet STFI26NM60N
Description N-Channel 600V 20A (Tc) 35W (Tc) Through Hole I2PAKFP (TO-281)

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مشخصات

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet STMicroelectronics STFI26NM60N
  • Power Dissipation (Pd) 35W
  • Drain Source Voltage (Vdss) 600V
  • Continuous Drain Current (Id) 20A
  • Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 165mΩ@10V,10A
  • Package TO-281
  • Manufacturer STMicroelectronics
  • Series MDmesh™ II
  • Packaging Tube
  • Part Status Obsolete
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 600V
  • Current - Continuous Drain (Id) @ 25°C 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 165mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
  • Vgs (Max) ±25V
  • Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V
  • FET Feature -
  • Power Dissipation (Max) 35W (Tc)
  • Operating Temperature 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package I2PAKFP (TO-281)
  • Package / Case TO-262-3 Full Pack, I²Pak
  • Base Part Number STFI26N
  • detail N-Channel 600V 20A (Tc) 35W (Tc) Through Hole I2PAKFP (TO-281)

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