STS9P2UH7
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| Manufacturer | STMicroelectronics |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Datasheet | STS9P2UH7 |
| Description | P-Channel 20V 9A (Tc) 2.7W (Tc) Surface Mount 8-SO |
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تغییرات قیمت
مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STS9P2UH7
- Power Dissipation (Pd) 2.7W
- Drain Source Voltage (Vdss) 20V
- Continuous Drain Current (Id) 9A
- Gate Threshold Voltage (Vgs(th)@Id) 1V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 22.5mΩ@4.5V,4.5A
- Package SOP-8
- Manufacturer STMicroelectronics
- Series STripFET™
- Packaging Cut Tape (CT)
- Part Status Obsolete
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs 22.5mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
- Vgs (Max) ±8V
- Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 16V
- FET Feature -
- Power Dissipation (Max) 2.7W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-SO
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Base Part Number STS9P
- detail P-Channel 20V 9A (Tc) 2.7W (Tc) Surface Mount 8-SO
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