TN0604N3-G
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| Manufacturer | Microchip Tech |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | TN0604 |
| Description | N-Channel 40V 700mA (Tj) 740mW (Ta) Through Hole TO-92-3 |
فروشنده های TN0604N3-G
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مشخصات TN0604N3-G
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Microchip Tech TN0604N3-G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 740mW
- Drain Source Voltage (Vdss) 40V
- Input Capacitance (Ciss@Vds) 190pF@20V
- Continuous Drain Current (Id) 700mA
- Gate Threshold Voltage (Vgs(th)@Id) 1.6V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 750mΩ@10V,1.5A
- Package TO-92
- Manufacturer Microchip Tech
- Series -
- Packaging Bulk
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40V
- Current - Continuous Drain (Id) @ 25°C 700mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Rds On (Max) @ Id, Vgs 750mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id 1.6V @ 1mA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 190pF @ 20V
- FET Feature -
- Power Dissipation (Max) 740mW (Ta)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- detail N-Channel 40V 700mA (Tj) 740mW (Ta) Through Hole TO-92-3
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