TN0110N3-G
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| Manufacturer | Microchip Tech |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | TN0110 |
| Description | N-Channel 100V 350mA (Tj) 1W (Tc) Through Hole TO-92-3 |
فروشنده های TN0110N3-G
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مشخصات TN0110N3-G
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Microchip Tech TN0110N3-G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1W
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 60pF@25V
- Continuous Drain Current (Id) 350mA
- Gate Threshold Voltage (Vgs(th)@Id) 2V@500uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 4.5Ω@4.5V,250mA
- Package TO-92-3
- Manufacturer Microchip Tech
- Series -
- Packaging Bulk
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 350mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id 2V @ 500µA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
- FET Feature -
- Power Dissipation (Max) 1W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- detail N-Channel 100V 350mA (Tj) 1W (Tc) Through Hole TO-92-3
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