BFU725F/N1,115
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| Manufacturer | NXP Semicon |
| Package | SOT-343 Reverse Pinning |
| Datasheet | BFU725F |
| Description | RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO |
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مشخصات BFU725F/N1,115
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet NXP Semicon BFU725F/N1,115
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 25mA
- Power Dissipation (Pd) 136mW
- Transition Frequency (fT) 55GHz
- DC Current Gain (hFE@Ic,Vce) 280@10mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 2.8V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
- Package SOT-343
- Manufacturer NXP Semicon
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Voltage - Collector Emitter Breakdown (Max) 2.8V
- Frequency - Transition 55GHz
- Noise Figure (dB Typ @ f) 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
- Gain 10dB ~ 24dB
- Power - Max 136mW
- DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 10mA, 2V
- Current - Collector (Ic) (Max) 40mA
- Mounting Type Surface Mount
- Package / Case SOT-343 Reverse Pinning
- Supplier Device Package 4-SO
- Base Part Number BFU72
- detail RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO
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