فروشنده های BUK652R0-30C,127
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مشخصات BUK652R0-30C,127
- Manufacturer NXP USA Inc.
- Series TrenchMOS™
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 2.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 229nC @ 10V
- Vgs (Max) ±16V
- Input Capacitance (Ciss) (Max) @ Vds 14964pF @ 25V
- FET Feature -
- Power Dissipation (Max) 306W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Base Part Number BUK65
- detail N-Channel 30V 120A (Tc) 306W (Tc) Through Hole TO-220AB
فروشنده های BUK652R0-30C,127
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