BUK7E2R7-30B,127
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| Manufacturer | NXP USA Inc. |
| Package | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Datasheet | BUK7E2R7-30B |
| Description | N-Channel 30V 75A (Tc) 300W (Tc) Through Hole I2PAK |
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مشخصات BUK7E2R7-30B,127
- Manufacturer NXP USA Inc.
- Series TrenchMOS™
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 6212pF @ 25V
- FET Feature -
- Power Dissipation (Max) 300W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I2PAK
- Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
- Base Part Number BUK7
- detail N-Channel 30V 75A (Tc) 300W (Tc) Through Hole I2PAK
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