فروشنده های BUK9E3R7-60E,127
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مشخصات BUK9E3R7-60E,127
- Manufacturer NXP USA Inc.
- Series TrenchMOS™
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
- Vgs (Max) ±10V
- Input Capacitance (Ciss) (Max) @ Vds 13490pF @ 25V
- FET Feature -
- Power Dissipation (Max) 293W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I2PAK
- Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
- Base Part Number BUK9
- detail N-Channel 60V 120A (Tc) 293W (Tc) Through Hole I2PAK
فروشنده های BUK9E3R7-60E,127
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