تغییرات قیمت
مشخصات
- Manufacturer Microchip Technology
- Series -
- Packaging Bulk
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 400V
- Current - Continuous Drain (Id) @ 25°C 86mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 25Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id 2.4V @ 1mA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
- FET Feature -
- Power Dissipation (Max) 740mW (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- detail P-Channel 400V 86mA (Tj) 740mW (Ta) Through Hole TO-92-3
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