FQB55N10TM

FQB55N10TM

FQB55N10TM

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مشخصات فنی:
ManufacturerON Semiconductor
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet FQB55N10
Description N-Channel 100V 55A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)
تغییرات قیمت
مشخصات
  • Manufacturer ON Semiconductor
  • Series QFET®
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100V
  • Current - Continuous Drain (Id) @ 25°C 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 26mOhm @ 27.5A, 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
  • Vgs (Max) ±25V
  • Input Capacitance (Ciss) (Max) @ Vds 2730pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 3.75W (Ta), 155W (Tc)
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package D²PAK (TO-263AB)
  • Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number FQB5
  • detail N-Channel 100V 55A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)
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