FQPF19N20C

FQPF19N20C

FQPF19N20C

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مشخصات فنی:
ManufacturerON Semiconductor
PackageTO-220-3 Full Pack
Datasheet FQPF19N20
Description N-Channel 200V 11.8A (Tc) 50W (Tc) Through Hole TO-220F
تغییرات قیمت
مشخصات
  • Manufacturer ON Semiconductor
  • Series QFET®
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 200V
  • Current - Continuous Drain (Id) @ 25°C 11.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 150mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 50W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220F
  • Package / Case TO-220-3 Full Pack
  • Base Part Number FQPF1
  • detail N-Channel 200V 11.8A (Tc) 50W (Tc) Through Hole TO-220F
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