FJV4104RMTF

FJV4104RMTF

FJV4104RMTF

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مشخصات فنی:
ManufacturerON Semiconductor
PackageTO-236-3, SC-59, SOT-23-3
Datasheet Mold Compound 12/Dec/2007
Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236)
تغییرات قیمت
مشخصات
  • Manufacturer ON Semiconductor
  • Series -
  • Packaging Cut Tape (CT)
  • Part Status Obsolete
  • Transistor Type PNP - Pre-Biased
  • Current - Collector (Ic) (Max) 100mA
  • Voltage - Collector Emitter Breakdown (Max) 50V
  • Resistor - Base (R1) 47 kOhms
  • Resistor - Emitter Base (R2) 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) 100nA (ICBO)
  • Frequency - Transition 200MHz
  • Power - Max 200mW
  • Mounting Type Surface Mount
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package SOT-23-3 (TO-236)
  • Base Part Number FJV410
  • detail Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236)
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