IXFX20N120

IXFX20N120

IXFX20N120

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مشخصات فنی:
ManufacturerIXYS
PackageTO-247-3
Datasheet IXF(K,X)20N120
Description N-Channel 1200V 20A (Tc) 780W (Tc) Through Hole PLUS247™-3
تغییرات قیمت
مشخصات
  • Manufacturer IXYS
  • Series HiPerFET™
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 1200V
  • Current - Continuous Drain (Id) @ 25°C 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 750mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 7400pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 780W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package PLUS247™-3
  • Package / Case TO-247-3
  • detail N-Channel 1200V 20A (Tc) 780W (Tc) Through Hole PLUS247™-3
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