NDUL03N150CG
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| Manufacturer | onsemi |
| Package | TO-3PL |
| Datasheet | NDUL03N150C |
| Description | --- |
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مشخصات NDUL03N150CG
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NDUL03N150CG
- Power Dissipation (Pd) 3W;50W
- Total Gate Charge (Qg@Vgs) 34nC@10V
- Drain Source Voltage (Vdss) 1.5kV
- Input Capacitance (Ciss@Vds) 650pF@30V
- Continuous Drain Current (Id) 2.5A
- Gate Threshold Voltage (Vgs(th)@Id) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 10.5Ω@10V,1.25A
- Package TO-3PL
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 1500V
- Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 10.5Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id -
- Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 650pF @ 30V
- FET Feature -
- Power Dissipation (Max) 3W (Ta), 50W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-3P(L)
- Package / Case TO-3PL
- Base Part Number NDUL03
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