STP4NK60Z
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | STP4NK60Z(FP) |
| Description | --- |
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مشخصات STP4NK60Z
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP4NK60Z
- Power Dissipation (Pd) 70W
- Total Gate Charge (Qg@Vgs) 26nC@10V
- Drain Source Voltage (Vdss) 600V
- Input Capacitance (Ciss@Vds) 510pF@25V
- Continuous Drain Current (Id) 4A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@50uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2Ω@10V,2A
- Package TO-220
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
- FET Feature -
- Power Dissipation (Max) 70W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Base Part Number STP4N
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