فروشنده های SCTH35N65G2V-7AG
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مشخصات SCTH35N65G2V-7AG
- Manufacturer STMicroelectronics
- Series Automotive, AEC-Q101
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
- Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id 3.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 73nC @ 20V
- Vgs (Max) +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 400V
- FET Feature -
- Power Dissipation (Max) 208W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package H2PAK-7
- Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- detail N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
فروشنده های SCTH35N65G2V-7AG
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