NTR4101PT1G
در 1 فروشگاه از 10,230 تا 10,230 تومان
| Manufacturer | onsemi |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | NTR(V)4101P |
| Description | P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236) |
فروشنده های NTR4101PT1G
| قیمت | |||
| NTR4101PT1G | 10230 تومان |
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تغییرات قیمت
مشخصات NTR4101PT1G
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTR4101PT1G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 420mW
- Total Gate Charge (Qg@Vgs) 8.5nC@4.5V
- Drain Source Voltage (Vdss) 20V
- Input Capacitance (Ciss@Vds) 675pF@10V
- Continuous Drain Current (Id) 3.2A
- Gate Threshold Voltage (Vgs(th)@Id) 1.2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 85mΩ@4.5V,1.6A
- Package SOT-23(TO-236)
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs 85mOhm @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
- Vgs (Max) ±8V
- Input Capacitance (Ciss) (Max) @ Vds 675pF @ 10V
- FET Feature -
- Power Dissipation (Max) 420mW (Ta)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-3 (TO-236)
- Package / Case TO-236-3, SC-59, SOT-23-3
- Base Part Number NTR410
- detail P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)
فروشنده های NTR4101PT1G
| قیمت | |||
| NTR4101PT1G | 10230 تومان |
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