IXFH34N65X2
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | IXYS |
| Package | TO-247-3 |
| Datasheet | IXFx34N65X2 |
| Description | N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-247 |
فروشنده های IXFH34N65X2
فروشگاهی یافت نشد
تغییرات قیمت
مشخصات IXFH34N65X2
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Littelfuse/IXYS IXFH34N65X2
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 540W
- Total Gate Charge (Qg@Vgs) 56nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 3330pF@25V
- Continuous Drain Current (Id) 34A
- Gate Threshold Voltage (Vgs(th)@Id) 5.5V@2.5mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 105mΩ@10V,17A
- Package TO-247-3
- Manufacturer IXYS
- Series HiPerFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 105mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 3330pF @ 25V
- FET Feature -
- Power Dissipation (Max) 540W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Package / Case TO-247-3
- detail N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-247
فروشنده های IXFH34N65X2
فروشگاهی یافت نشد