规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet LGE BC857C
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 250mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
- Collector Cut-Off Current (Icbo) 1nA
- Collector-Emitter Breakdown Voltage (Vceo) 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@10mA,500uA
- Package SOT-23
- Manufacturer LGE
