STP12NM50N
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | STx12NM50N |
| Description | N-Channel 500V 11A (Tc) 100W (Tc) Through Hole TO-220AB |
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规格
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 940pF @ 50V
- FET Feature -
- Power Dissipation (Max) 100W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Base Part Number STP12
- detail N-Channel 500V 11A (Tc) 100W (Tc) Through Hole TO-220AB
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