MMBT5550
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| Manufacturer | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Package | --- |
| Datasheet | MMBT5550 |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. MMBT5550
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 600mA
- Power Dissipation (Pd) 225mW
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 60@10mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 140V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 250mV@50mA,5mA
- Package SOT-23
- Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd.
- Part id 34885
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