30N06
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| Manufacturer | UMW(Youtai Semiconductor Co., Ltd.) |
| Package | --- |
| Datasheet | 30N06 |
| Description | --- |
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet UMW(Youtai Semiconductor Co., Ltd.) 30N06
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 55W
- Total Gate Charge (Qg@Vgs) 25nC@10V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 1562pF@25V
- Continuous Drain Current (Id) 30A
- Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 29mΩ@15A,10V
- Package TO-252
- Manufacturer UMW(Youtai Semiconductor Co., Ltd.)
- Part id 413387
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