STP4N150
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| Manufacturer | STMicroelectronics |
| Package | --- |
| Datasheet | STP4N150 |
| Description | --- |
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP4N150
- Power Dissipation (Pd) 160W
- Total Gate Charge (Qg@Vgs) 50nC@10V
- Drain Source Voltage (Vdss) 1.5kV
- Input Capacitance (Ciss@Vds) 1300pF@25V
- Continuous Drain Current (Id) 4A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 7Ω@10V,2A
- Package TO-220
- Manufacturer STMicroelectronics