SVF23N50PN
在 2 商店
从 99,700 至 106,000 IRT
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | --- |
| Datasheet | SVF23N50PN |
| Description | --- |
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Hangzhou Silan Microelectronics SVF23N50PN
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 280W
- Total Gate Charge (Qg@Vgs) 42.51nC@10V
- Drain Source Voltage (Vdss) 500V
- Input Capacitance (Ciss@Vds) 2.5958nF@25V
- Continuous Drain Current (Id) 23A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 10.1pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 210mΩ@10V,11.5A
- Package TO-3P-3
- Manufacturer Hangzhou Silan Microelectronics
