BFR93AE6327HTSA1
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | BFR93AE6327HTSA1 |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Infineon Technologies BFR93AE6327HTSA1
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 90mA
- Power Dissipation (Pd) 300mW
- Transition Frequency (fT) 6GHz
- DC Current Gain (hFE@Ic,Vce) 70@30mA,8V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 12V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
- Package SOT-23(TO-236)
- Manufacturer Infineon Technologies
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