TSM650P03CX RFG
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| Manufacturer | Taiwan Semiconductor |
| Package | --- |
| Datasheet | TSM650P03CX RFG |
| Description | --- |
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规格
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Taiwan Semiconductor TSM650P03CX RFG
- Power Dissipation (Pd) 1.56W
- Total Gate Charge (Qg@Vgs) 6.4nC@4.5V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 810pF@15V
- Continuous Drain Current (Id) 4.1A
- Gate Threshold Voltage (Vgs(th)@Id) 900mV@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 65mΩ@10V,4A
- Package SOT-23(TO-236)
- Manufacturer Taiwan Semiconductor
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