FDG6301N
在 0 商店
价格尚未确定
该产品目前没有卖家！
| Manufacturer | onsemi |
| Package | --- |
| Datasheet | FDG6301N |
| Description | --- |
sellers FDG6301N
未找到商店
价格变化
规格
- RoHS true
- Type 2 N-Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDG6301N
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 300mW
- Total Gate Charge (Qg@Vgs) 0.4nC@4.5V
- Drain Source Voltage (Vdss) 25V
- Input Capacitance (Ciss@Vds) 9.5pF@10V
- Continuous Drain Current (Id) 220mA
- Gate Threshold Voltage (Vgs(th)@Id) 1.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 4Ω@220mA,4.5V
- Package SC-70-6
- Manufacturer onsemi
卖家
未找到商店
