价格变化
规格
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet JSMSEMI FQP50N06
- Package TO-220
- Manufacturer JSMSEMI
- Type N Channel
- Power Dissipation (Pd) 120W
- Drain Source Voltage (Vdss) 60V
- Continuous Drain Current (Id) 50A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 22mΩ@10V,25A
- Series QFET®
- Packaging Tube
- Part Status Not For New Designs
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 22mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 1540pF @ 25V
- FET Feature -
- Power Dissipation (Max) 120W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FQP5