价格变化
规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Shikues BC850B
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 250mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 240@10uA,5V
- Collector Cut-Off Current (Icbo) 15nA
- Collector-Emitter Breakdown Voltage (Vceo) 35V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 90mV@10mA,0.5mA
- Package SOT-23(TO-236)
- Manufacturer Shikues
