BC849C
在 2 商店
价格尚未确定
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | --- |
| Datasheet | BC849C |
| Description | --- |
规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Yangzhou Yangjie Elec Tech BC849C
- Transistor Type NPN
- Operating Temperature -55°C~+150°C
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 225mW
- Transition Frequency (fT) 150MHz
- DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@100mA,5mA
- Package SOT-23(TO-236)
- Manufacturer Yangzhou Yangjie Elec Tech
