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IXTQ50N25T* Datasheet
Datasheet specifications
| Datasheet's name | IXTx50N25T |
|---|---|
| File size | 275.692 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet IXTx50N25T |
Download Datasheet |
|---|
Other documentations
No other documentation was found!
Technical specifications
- Manufacturer: IXYS
- Series: -
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
- detail: N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-3P