MJD32CT4G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MJD32CT4G
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حجم فایل
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96.465
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJD32CT4G
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Transistor Type:
PNP
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
3A
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Power Dissipation (Pd):
1.56W
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Transition Frequency (fT):
3MHz
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DC Current Gain (hFE@Ic,Vce):
10@3A,4V
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Collector Cut-Off Current (Icbo):
50uA
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Collector-Emitter Breakdown Voltage (Vceo):
100V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.2V@3A,375mA
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
3A
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Voltage - Collector Emitter Breakdown (Max):
100V
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Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
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Current - Collector Cutoff (Max):
50µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
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Power - Max:
15W
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Frequency - Transition:
-
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Mounting Type:
Surface Mount
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Supplier Device Package:
DPAK
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Base Part Number:
MJD32
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detail:
Bipolar (BJT) Transistor PNP 100V 3A 15W Surface Mount DPAK
