دیتاشیت MJD112-1G
مشخصات دیتاشیت
| نام دیتاشیت |
MJD112,117
|
| حجم فایل |
151.653
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Active
-
Transistor Type:
NPN - Darlington
-
Current - Collector (Ic) (Max):
2A
-
Voltage - Collector Emitter Breakdown (Max):
100V
-
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
-
Current - Collector Cutoff (Max):
20µA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
-
Power - Max:
1.75W
-
Frequency - Transition:
25MHz
-
Operating Temperature:
-65°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
-
Supplier Device Package:
I-PAK
-
Base Part Number:
MJD11
-
detail:
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
