MJD112,117 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MJD112,117
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حجم فایل
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151.653
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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Manufacturer:
ON Semiconductor
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Series:
-
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Packaging:
Tube
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Part Status:
Obsolete
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Transistor Type:
PNP - Darlington
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Current - Collector (Ic) (Max):
2A
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Voltage - Collector Emitter Breakdown (Max):
100V
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Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
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Current - Collector Cutoff (Max):
20µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
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Power - Max:
1.75W
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Frequency - Transition:
25MHz
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Operating Temperature:
-65°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
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Supplier Device Package:
I-PAK
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Base Part Number:
MJD11
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detail:
Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
