دیتاشیت MJD253-001
مشخصات دیتاشیت
| نام دیتاشیت |
MJD243,253
|
| حجم فایل |
109.881
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
Transistor Type:
PNP
-
Current - Collector (Ic) (Max):
4A
-
Voltage - Collector Emitter Breakdown (Max):
100V
-
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
-
Current - Collector Cutoff (Max):
100nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 200mA, 1V
-
Power - Max:
1.4W
-
Frequency - Transition:
40MHz
-
Operating Temperature:
-65°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
-
Supplier Device Package:
I-PAK
-
Base Part Number:
MJD25
-
detail:
Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK
