VN2210 Datasheet دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
VN2210 Datasheet
|
|
حجم فایل
|
1111.898
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
14
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Microchip Tech VN2210N3-G
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
740mW
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
500pF@25V
-
Continuous Drain Current (Id):
1.2A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.4V@10mA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
350mΩ@4A,10V
-
Package:
TO-92
-
Manufacturer:
Microchip Tech
-
Series:
-
-
Packaging:
Bulk
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
1.2A (Tj)
-
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
-
Rds On (Max) @ Id, Vgs:
350mOhm @ 4A, 10V
-
Vgs(th) (Max) @ Id:
2.4V @ 10mA
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
500pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
740mW (Tc)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-92-3
-
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
-
detail:
N-Channel 100V 1.2A (Tj) 740mW (Tc) Through Hole TO-92-3
