دیتاشیت APT28M120B2
مشخصات دیتاشیت
| نام دیتاشیت | APT28M120(B2,L) |
|---|---|
| حجم فایل | 212.826 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 4 |
دانلود دیتاشیت APT28M120(B2,L) |
APT28M120(B2,L) Datasheet |
|---|
مشخصات
- Manufacturer: Microchip Technology
- Series: POWER MOS 8™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 1135W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
- detail: N-Channel 1200V 29A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]
