دیتاشیت NJVMJD31CT4G
مشخصات دیتاشیت
| نام دیتاشیت |
NJVMJD31CT4G
|
| حجم فایل |
96.465
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi NJVMJD31CT4G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
3A
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Power Dissipation (Pd):
1.56W
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Transition Frequency (fT):
3MHz
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DC Current Gain (hFE@Ic,Vce):
25@1A,4V
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Collector Cut-Off Current (Icbo):
50uA
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Collector-Emitter Breakdown Voltage (Vceo):
100V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.2V@3A,375mA
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Package:
TO-252
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Manufacturer:
onsemi
