دیتاشیت STP10NK80ZFP
مشخصات دیتاشیت
نام دیتاشیت | ST(P,W)10NK80Z(FP) |
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حجم فایل | 450.3 کیلوبایت |
نوع فایل | |
تعداد صفحات | 17 |
دانلود دیتاشیت ST(P,W)10NK80Z(FP) |
ST(P,W)10NK80Z(FP) Datasheet |
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مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STP10NK80ZFP
- Power Dissipation (Pd): 40W
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 9A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 900mΩ@10V,4.5A
- Package: TO-220AB-3
- Manufacturer: STMicroelectronics
- Series: SuperMESH™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
- Base Part Number: STP10
- detail: N-Channel 800V 9A (Tc) 40W (Tc) Through Hole TO-220FP