BFP 420F H6327
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | BFP 420F H6327 |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Infineon Technologies BFP 420F H6327
- Transistor Type NPN
- Collector Current (Ic) 60mA
- Power Dissipation (Pd) 210mW
- Transition Frequency (fT) 25GHz
- DC Current Gain (hFE@Ic,Vce) 60@5mA,4V
- Collector Cut-Off Current (Icbo) -
- Collector-Emitter Breakdown Voltage (Vceo) 4.5V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
- Package TSFP-4
- Manufacturer Infineon Technologies
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