FQA11N90C-F109
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| Manufacturer | onsemi |
| Package | TO-3P-3, SC-65-3 |
| Datasheet | FQA11N90C_F109 |
| Description | N-Channel 900V 11A (Tc) 300W (Tc) Through Hole TO-3P |
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مشخصات FQA11N90C-F109
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQA11N90C-F109
- Power Dissipation (Pd) 300W
- Drain Source Voltage (Vdss) 900V
- Continuous Drain Current (Id) 11A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.1Ω@10V,5.5A
- Package TO-3P
- Manufacturer onsemi
- Series QFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 900V
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 1.1Ohm @ 5.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V
- FET Feature -
- Power Dissipation (Max) 300W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-3P
- Package / Case TO-3P-3, SC-65-3
- Base Part Number FQA1
- detail N-Channel 900V 11A (Tc) 300W (Tc) Through Hole TO-3P
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