BD435G
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | BD435,437,439,441 |
| Description | Bipolar (BJT) Transistor NPN 32V 4A 3MHz 36W Through Hole TO-225AA |
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مشخصات BD435G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BD435G
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 4A
- Power Dissipation (Pd) 36W
- Transition Frequency (fT) 3MHz
- DC Current Gain (hFE@Ic,Vce) 85@500mA,1V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 32V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@2A,200mA
- Package TO-225
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 32V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max) 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA, 1V
- Power - Max 36W
- Frequency - Transition 3MHz
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-225AA
- Base Part Number BD435
- detail Bipolar (BJT) Transistor NPN 32V 4A 3MHz 36W Through Hole TO-225AA
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