2SA2012-TD-E
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| Manufacturer | onsemi |
| Package | TO-243AA |
| Datasheet | 2SA2012/2SC5565 |
| Description | Bipolar (BJT) Transistor PNP 30V 5A 420MHz 3.5W Surface Mount PCP |
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مشخصات 2SA2012-TD-E
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi 2SA2012-TD-E
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 3.5W
- Transition Frequency (fT) 350MHz
- DC Current Gain (hFE@Ic,Vce) 200@500mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 170mV@2.5A,125mA
- Package SOT-89
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 5A
- Voltage - Collector Emitter Breakdown (Max) 30V
- Vce Saturation (Max) @ Ib, Ic 210mV @ 30mA, 1.5A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
- Power - Max 3.5W
- Frequency - Transition 420MHz
- Mounting Type Surface Mount
- Package / Case TO-243AA
- Supplier Device Package PCP
- Base Part Number 2SA2012
- detail Bipolar (BJT) Transistor PNP 30V 5A 420MHz 3.5W Surface Mount PCP
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