FDB86566-F085
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| Manufacturer | onsemi |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | FDB86566-F085 Datasheet |
| Description | N-Channel 60V 110A (Tc) 176W (Tj) Surface Mount D²PAK (TO-263AB) |
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مشخصات FDB86566-F085
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDB86566-F085
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 176W
- Total Gate Charge (Qg@Vgs) 80nC@0~10V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 6.655nF@30V
- Continuous Drain Current (Id) 110A
- Gate Threshold Voltage (Vgs(th)@Id) 3.2V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 57pF@30V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.2Ω@10V,80A
- Package TO-263
- Manufacturer onsemi
- Series Automotive, AEC-Q101, PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2.7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 6655pF @ 30V
- FET Feature -
- Power Dissipation (Max) 176W (Tj)
- Mounting Type Surface Mount
- Supplier Device Package D²PAK (TO-263AB)
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number FDB865
- detail N-Channel 60V 110A (Tc) 176W (Tj) Surface Mount D²PAK (TO-263AB)
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