NTTFS2D1N04HLTWG
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| Manufacturer | onsemi |
| Package | 8-PowerWDFN |
| Datasheet | NTTFS2D1N04HL |
| Description | N-Channel 40V 24A (Ta), 150A (Tc) 2.2W (Ta), 83W (Tc) Surface Mount 8-PQFN (3.3x3.3) |
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مشخصات NTTFS2D1N04HLTWG
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTTFS2D1N04HLTWG
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.2W;83W
- Total Gate Charge (Qg@Vgs) 43.6nC@10V
- Drain Source Voltage (Vdss) 40V
- Input Capacitance (Ciss@Vds) 2745pF@20V
- Continuous Drain Current (Id) 24A;150A
- Gate Threshold Voltage (Vgs(th)@Id) 2V@120uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.1mΩ@23A,10V
- Package PQFN-8(3.3x3.3)
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40V
- Current - Continuous Drain (Id) @ 25°C 24A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 2.1mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id 2V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs 43.6nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 2745pF @ 20V
- FET Feature -
- Power Dissipation (Max) 2.2W (Ta), 83W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package 8-PQFN (3.3x3.3)
- Package / Case 8-PowerWDFN
- detail N-Channel 40V 24A (Ta), 150A (Tc) 2.2W (Ta), 83W (Tc) Surface Mount 8-PQFN (3.3x3.3)
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