KSD471ACYTA
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | KSD471A |
| Description | Bipolar (BJT) Transistor NPN 30V 1A 130MHz 800mW Through Hole TO-92-3 |
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مشخصات KSD471ACYTA
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi KSD471ACYTA
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 1A
- Power Dissipation (Pd) 800mW
- Transition Frequency (fT) 130MHz
- DC Current Gain (hFE@Ic,Vce) 120@100mA,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@1A,100mA
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Discontinued at Digi-Key
- Current - Collector (Ic) (Max) 1A
- Voltage - Collector Emitter Breakdown (Max) 30V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V
- Power - Max 800mW
- Frequency - Transition 130MHz
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number KSD471
- detail Bipolar (BJT) Transistor NPN 30V 1A 130MHz 800mW Through Hole TO-92-3
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