BU406TU
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | BU406 |
| Description | Bipolar (BJT) Transistor NPN 200V 7A 10MHz 60W Through Hole TO-220AB |
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تغییرات قیمت
مشخصات BU406TU
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BU406TU
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 7A
- Power Dissipation (Pd) 60W
- Transition Frequency (fT) 10MHz
- Collector Cut-Off Current (Icbo) -
- Collector-Emitter Breakdown Voltage (Vceo) 200V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@5A,500mA
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 7A
- Voltage - Collector Emitter Breakdown (Max) 200V
- Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
- Current - Collector Cutoff (Max) 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce -
- Power - Max 60W
- Frequency - Transition 10MHz
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number BU406
- detail Bipolar (BJT) Transistor NPN 200V 7A 10MHz 60W Through Hole TO-220AB
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