NTGD4167CT1G
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| Manufacturer | onsemi |
| Package | SOT-23-6 Thin, TSOT-23-6 |
| Datasheet | NTGD4167C |
| Description | Mosfet Array N and P-Channel 30V 2.6A, 1.9A 900mW Surface Mount 6-TSOP |
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مشخصات NTGD4167CT1G
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTGD4167CT1G
- Power Dissipation (Pd) -
- Total Gate Charge (Qg@Vgs) -
- Drain Source Voltage (Vdss) -
- Input Capacitance (Ciss@Vds) -
- Continuous Drain Current (Id) -
- Gate Threshold Voltage (Vgs(th)@Id) -
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) -
- Package TSOP-6-1.5mm
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N and P-Channel
- FET Feature Logic Level Gate
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 2.6A, 1.9A
- Rds On (Max) @ Id, Vgs 90mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 295pF @ 15V
- Power - Max 900mW
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Package / Case SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package 6-TSOP
- Base Part Number NTGD41
- detail Mosfet Array N and P-Channel 30V 2.6A, 1.9A 900mW Surface Mount 6-TSOP
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