IXFN38N100P
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | IXYS |
| Package | SOT-227-4, miniBLOC |
| Datasheet | IXFN38N100P |
| Description | N-Channel 1000V 38A (Tc) 1000W (Tc) Chassis Mount SOT-227B |
فروشنده های IXFN38N100P
فروشگاهی یافت نشد
تغییرات قیمت
مشخصات IXFN38N100P
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Littelfuse/IXYS IXFN38N100P
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1kW
- Total Gate Charge (Qg@Vgs) 350nC@10V
- Drain Source Voltage (Vdss) 1kV
- Input Capacitance (Ciss@Vds) 24000pF@25V
- Continuous Drain Current (Id) 38A
- Gate Threshold Voltage (Vgs(th)@Id) 6.5V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 210mΩ@10V,19A
- Package SOT-227
- Manufacturer IXYS
- Series HiPerFET™, PolarP2™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 1000V
- Current - Continuous Drain (Id) @ 25°C 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 210mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 350nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 24000pF @ 25V
- FET Feature -
- Power Dissipation (Max) 1000W (Tc)
- Mounting Type Chassis Mount
- Supplier Device Package SOT-227B
- Package / Case SOT-227-4, miniBLOC
- detail N-Channel 1000V 38A (Tc) 1000W (Tc) Chassis Mount SOT-227B
فروشنده های IXFN38N100P
فروشگاهی یافت نشد